BISMUTH TELLURIDE
BISMUTH TELLURIDE
CAS: 1304-82-1
Molecular Formula: Bi2Te3
BISMUTH TELLURIDE - Names and Identifiers
| Name | BISMUTH TELLURIDE |
| Synonyms | BISMUTH TELLURIDE BISMUTH TELLURIDE, Bismuth(3 ) telluride bismuthsesquitelluride Bismuth telluride, se-doped |
| CAS | 1304-82-1 |
| EINECS | 215-135-2 |
BISMUTH TELLURIDE - Physico-chemical Properties
| Molecular Formula | Bi2Te3 |
| Molar Mass | 800.76 |
| Density | 7.642 g/mL at 25 °C(lit.)v |
| Melting Point | 585 °C(lit.) |
| Boling Point | 1172 °C |
| Water Solubility | Insoluble in water. |
| Appearance | Grey powder |
| Storage Condition | Room Temprature |
| MDL | MFCD00014201 |
| Use | Applications for semiconductors, electronic refrigeration and power generation, bismuth telluride and its solid solution is one of the earliest and most mature thermoelectric materials studied. |
BISMUTH TELLURIDE - Risk and Safety
| Hazard Symbols | Xn - Harmful |
| Risk Codes | R20/21/22 - Harmful by inhalation, in contact with skin and if swallowed. R36/37/38 - Irritating to eyes, respiratory system and skin. |
| Safety Description | S26 - In case of contact with eyes, rinse immediately with plenty of water and seek medical advice. S36 - Wear suitable protective clothing. |
| UN IDs | UN 3284 6.1/PG 3 |
BISMUTH TELLURIDE - Effect of preparation process on thermoelectric properties of p-type bismuth telluride-based alloys
from hownet
Author:
Jiang Jun , Li , Xu Gaojie , Cui Ping , Wu Ting , Chen Lidong , Wang Gang
Abstract:
p-type bismuth telluride based thermoelectric materials were prepared by zone melting method, mechanical alloying, spark plasma sintering (SPS) technology and hot pressing method. Various thermoelectric performance parameters were measured in the temperature range of 300-500K, including electrical conductivity (& sigma;), Seebeck coefficient (α) and thermal conductivity (& kappa;), the effect of preparation process on thermoelectric properties was studied. The results show that the performance figure of ZT of the prepared bulk material is improved in different degrees compared with the fused crystal in the same composition region. Among them, the block material with the best thermoelectric properties can be obtained by using the zone melting method combined with SPS Technology, and the ZT value is 1.15.
Key words:
bismuth telluride spark plasma sintering zone melting method thermoelectric properties
DOI:
10.3321/j.issn:1000-3290.2007.05.064
cited:
year:
2007
Last Update：2024-01-02 23:10:35
BISMUTH TELLURIDE - Fabrication of bismuth telluride thin films by electrochemical atomic layer epitaxy
from VIP Journal Professional Edition
Author:
Zhu Wen , Junyou Yang , bright light , Hou Jie , Barre , fan xian
Abstract:
The thin-layer electrochemical behaviors of bismuth and tellurium deposited on cold pressed silver substrates were studied. The underpotential transfer voltammetry characteristics of the initial under-potential deposition of bismuth on the surface of cold-pressed silver covered by tellurium and the under-potential deposition of tellurium on the surface of cold-pressed silver covered by bismuth were analyzed. The results confirm that the transfer characteristics are consistent with the mechanism of underpotential kinetics. Bismuth telluride thin films were prepared by alternating deposition of tellurium and bismuth in an automated electrochemical thin-layer flow deposition system. XRD tests showed that the deposit was B i2Te3.EDX quantitative analysis gives an elemental stoichiometric ratio of bismuth to tellurium of 2:3, which is consistent with the XRD results. Electron Probe Microanalysis of the deposit revealed a lattice structure, which may be related to the surface defects of the cold-pressed silver substrate and the lattice mismatch between silver and B i2Te3.
Key words:
electrochemical atomic layer epitaxy underpotential bismuth telluride thermoelectric thin film
DOI:
10.3969/j.issn.1000-0518.2005.11.002
cited:
year:
2005
Last Update：2023-08-16 22:05:47
BISMUTH TELLURIDE - Preparation Method of bismuth telluride based thermoelectric material
from VIP Journal Professional Edition
Author:
Chen Lidong , Jiang Jun , Bai Shengqiang
Abstract:
The invention relates to a preparation method of a bismuth telluride-based thermoelectric material, which comprises the following steps:(1) preparing a bismuth telluride-based oriented polycrystalline rod by a zone melting method, the melting temperature is 700-800 ℃, and the temperature gradient is 25 ℃/mm. (2) the polycrystal rod is immersed in hydrofluoric acid solution, and then washed with alcohol and deionized water, until the surface pH is 7; Finally dried in vacuum; Then crushed, sieved; Ultrasonic pretreatment of powder before sintering;(3) Spark Plasma rapid sintering in vacuum or inert atmosphere, the sintering temperature range is 360-510 ℃, the heating rate is 20-200 ℃/mm, the sintering time is 10-60min, and the pressure is 20-120MPa. On the basis of ensuring that the thermoelectric conversion performance is equivalent to that of the zone melting oriented polycrystalline material, the utilization rate of the material, the machinability, the reliability of the product are greatly improved, and the production cost is significantly reduced, so it has a good prospect of industrialization.
Key words:
bismuth telluride-based thermoelectric materials preparation method polycrystalline Rod
cited:
year:
2004
Last Update：2023-08-16 22:05:47
BISMUTH TELLURIDE - Hydrothermal synthesis and thermal stability of bismuth telluride powders
from hownet
Author:
Yang Jia , Xu Wenjun , Wang Bing , Li Cai-Xia , edge soldiers , Zhou Jianping , Liu Peng
Abstract:
by changing the experimental conditions, single-phase Bi2Te3 powder was synthesized under the wide hydrothermal conditions of 130~200 ℃ and NaOH solution concentration of 2~8 mol/L. Using X-ray diffraction (XRD), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), energy dispersive spectrometer (EDAX), Thermal Analysis System (TG-DTA) on the phase composition of the product, morphology, crystal structure and thermal stability were studied. The results show that when the surfactant is not added, the concentration of NaOH solution is not only an important factor in the synthesis of pure Bi2Te3 powder, but also affects the crystal morphology and grain size of the obtained Bi2Te3 powder at a certain reaction temperature. When the concentration of NaOH solution is low and the reaction temperature is high, Bi2Te3 is generated by atom binding, and conversely, Bi2Te3 is generated by ion binding. The general formation mechanism is helpful for the synthesis of Telluride by hydrothermal method or solvothermal method in the future, and the study of thermal stability puts forward new requirements for the experimental results.
expand
Key words:
hydrothermal method; Bi2Te3 powder; NaOH solution concentration; topological insulator materials
DOI:
CNKI:SUN:RGJT.0.2012-06-026
cited:
year:
2012
Last Update：2023-08-16 22:05:47
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BISMUTH TELLURIDE
3-叔丁基咪唑烷-2,4-二酮
SSR 182289
顺式-4-羟基-L-脯氨酸甲酯盐酸盐
Ethanedioic acid, 1,2-bis[2-[(2-chlorophenyl)methylene]hydrazide]
4 -(3-丁烯磺酰)苯基硼酸
5-氟-3-甲基苯并[B]噻吩
(3R,4S)-REL-4-氨基-3-甲氧基-1-哌啶甲酸乙酯
(((PHOSPHONOMETHYL)IMINO)BIS((2,1-ETHANEDIYLNITRILO)-BIS(M.
4-氨基-3-(1-萘基)-2-硫代-噻唑-5-羧酸乙酯
3-叔丁基咪唑烷-2,4-二酮
SSR 182289
顺式-4-羟基-L-脯氨酸甲酯盐酸盐
Ethanedioic acid, 1,2-bis[2-[(2-chlorophenyl)methylene]hydrazide]
4 -(3-丁烯磺酰)苯基硼酸
5-氟-3-甲基苯并[B]噻吩
(3R,4S)-REL-4-氨基-3-甲氧基-1-哌啶甲酸乙酯
(((PHOSPHONOMETHYL)IMINO)BIS((2,1-ETHANEDIYLNITRILO)-BIS(M.
4-氨基-3-(1-萘基)-2-硫代-噻唑-5-羧酸乙酯